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| 0.5 - 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features * High Output Power: 20.5 dBm Typical P1 dB at 4 GHz * Low Noise Figure: 1.0 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * Hermetic Gold-Ceramic Microstrip Package ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB Min. Typ. Max. 1.0 1.2 1.4 14.0 11.0 8.5 20.5 13.0 50 50 -3.0 80 100 -2.0 150 -0.8 1.3 GA Gain @ NFO: VDS = 3 V, IDS = 20 mA dB 13.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS = 50 mA 1 dB Compressed Gain: VDS =5 V, IDS =50 mA Transconductance: VDS =3 V, VGS = 0 V Saturated Drain Current: VDS = 3 V, VGS = 0 V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA dBm dB mmho mA V 5965-8711E 5-60 ATF-25570 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] + 7 -4 -8 IDSS 450 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 3.3 mW/C for TCASE > 40C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 300C/W; TCH = 150C 1 m Spot Size[4] ATF-25570 Typical Performance, TA = 25C 25 25 MSG 20 MSG 20 GAIN (dB) GAIN (dB) 15 MAG |S21|2 15 |S21|2 MAG 10 10 5 5 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 50 mA. 5-61 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 3 V, IDS = 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .98 .96 .84 .78 .72 .68 .63 .60 .58 .59 .60 .60 .59 S11 Ang. -24 -41 -76 -100 -123 -142 -162 175 150 128 113 104 91 dB 14.0 13.4 12.3 10.8 9.6 8.5 7.8 7.2 6.3 5.6 4.7 4.1 3.9 S21 Mag. 5.02 4.70 4.14 3.48 3.01 2.67 2.45 2.30 2.06 1.90 1.72 1.61 1.56 Ang. 160 145 115 94 73 54 36 18 -1 -19 -36 -48 -68 dB -28.9 -26.2 -22.5 -20.9 -19.8 -18.8 -18.3 -17.5 -17.0 -16.7 -16.4 -16.1 -15.9 S12 Mag. .036 .049 .075 .090 .102 .114 .121 .133 .141 .146 .151 .157 .160 S22 Ang. 71 62 44 33 20 9 0 -7 -16 -28 -35 -40 -44 Mag. .56 .55 .49 .46 .42 .38 .35 .30 .26 .25 .26 .28 .30 Ang. -24 -33 -51 -60 -76 -88 -101 -118 -138 -167 172 155 146 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 5 V, IDS = 50 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .97 .94 .81 .73 .66 .61 .57 .56 .57 .59 .60 .60 .57 S11 Ang. -27 -45 -82 -105 -128 -148 -170 167 145 127 115 108 93 dB 16.2 15.5 13.5 11.7 10.3 9.2 8.5 7.6 6.8 6.0 5.2 4.7 4.5 S21 Mag. 6.49 5.95 4.72 3.86 3.29 2.88 2.65 2.41 2.19 2.00 1.82 1.72 1.67 Ang. 156 141 111 91 70 52 34 16 -1 -18 -35 -47 -64 dB -32.0 -29.9 -26.2 -24.9 -23.4 -22.5 -21.6 -20.2 -19.2 -18.5 -17.8 -17.5 -16.9 S12 Mag. .025 .032 .049 .057 .068 .075 .083 .097 .110 .119 .129 .134 .143 S22 Ang. 63 57 45 41 37 32 30 28 18 12 4 1 -10 Mag. .59 .60 .58 .55 .52 .49 .48 .45 .42 .40 .40 .42 .44 Ang. -21 -28 -39 -50 -62 -72 -84 -98 -115 -136 -159 -176 173 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions .040 1.02 SOURCE 4 .020 .508 GATE 1 DRAIN 3 SOURCE 2 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .004 .002 .10 .05 .070 1.70 .495 .030 12.57 .76 .035 .89 5-62 |
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